Transistor datasheet, transistor pdf, transistor data sheet, datasheet, data sheet, pdf. A733 pnp epitaxial silicon transistor elite enterprises h. Pdta124e series features builtin bias resistors simplified circuit design reduction of component count reduced pick and place costs. Mos fet realizes low onstate resistance with even compact packages. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. Toshiba transistor silicon npn epitaxial type 2sc2878.
Toshiba transistor silicon pnp epitaxial type pct process 2sa10 color tv verttical deflection output applications power switching applications high voltage. Discrete 300v, 200a, igbt insulatedgate bipolar transistor. Gt30f124 transistor datasheet, gt30f124 equivalent, pdf data sheets. Dtc114em dtc114ee dtc114eua dtc114eka dtc114esa zapplications inverter, interface, driver zfeatures 1 builtin bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit. Browse transistors datasheets for new jersey semiconductor products, inc. Gouptec 10pcs 30f124 gt30f124 igbt high speed switching to. Complement to 2sb595 absolute maximum ratings t a25. Data sheets contain information regarding a product macom technology solutions is considering for development. This device is igbt insulated gate bipolar transistor. The toshiba discrete igbts are available in highvoltage and highcurrent ratings.
Characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation tc25. Lg 42pw451 zd plasma repair board irg7ic28u 2piece. Fairchild semiconductor reserves the right to make changes at any time without notice to improve design. However, at high voltages, the onstate resistance rapidly increases as the breakdown voltage increases. Toshiba transistor silicon pnp epitaxial type pct process. Find pdf c945 transistor related suppliers, manufacturers, products and. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical. Free packages are available maximum ratings rating symbol value unit collector. Performance is based on target specifications, simulated results, andor prototype measurements. Select the part name and then you can download the datasheet in pdf format. It is thus difficult to improve the conduction loss of power mosfets. Aug 29, 2016 30f124 datasheet 300v 200a igbt, datasheet, 30f124 pdf, 30f124 pinouts, circuit, ic, manual, substitute, parts, 30f124 datenblatt, schematic, reference. Use the easy search guide below to go through categories like computer systems, electromechanical components, and optoelectronics, and fine tune your search by selecting from various end markets like consumer appliances, lighting, and broadcast technologies. A wide variety of transistor 30f124 options are available to you, there are 464 suppliers who sells transistor 30f124 on, mainly located in asia.
Discrete igbt 30f124 gt30f124 300v 200a to220sis package, 30f124 pdf download toshiba, 30f124 datasheet pdf, pinouts, data sheet, circuits. Dtc114em dtc114ee dtc114eua dtc114eka dtc114esa 100ma. We have the broadest line of bipolar power transistors in the industry and the motorola commitment to quality and total customer satisfaction to go with them. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126 to220 to220f to3p to3pf 2. Recent listings manufacturer directory get instant. Low noise transistor series muting transistor series transistor new products. This page describes the thermal and electrical characteristics of the mosfet shown in its datasheet such as leakage current, cutoff current, breakdown voltage. Npn silicon transistor pin connection descriptions switching application interface circuit and driver circuit application features with builtin bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density ordering information type no. Igbts combine the mosfet advantage of high input impedance with the bipolar transistor advantage of highvoltage drive. Here youll find detailed product descriptions and quickclick access to product datasheets. Discrete 300v, 200a, igbt insulatedgate bipolar transistor package. Mps4124 amplifier transistor npn silicon features pb. Applications general purpose switching and amplification inverter and interface circuits circuit driver.
Gouptec 10pcs 30f124 gt30f124 igbt high speed switching to220. A1015 pnp epitaxial silicon transistor elite enterprises h. The top countries of suppliers are turkey, china, from which the percentage of transistor 30f124 supply is 1%, 99% respectively. In certain cases, the quoted collector current may be exceeded. The device is a npn transistor manufactured by using planar technology resulting.
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